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NTB65N02R, NTP65N02R
ELECTRICAL CHARACTERISTICS (T J = 25 ° C Unless otherwise specified)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage (Note 3)
(V GS = 0 V dc , I D = 250 m A dc )
Temperature Coefficient (Positive)
V (BR)DSS
24
?
27.5
25.5
?
?
V dc
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
m A dc
(V DS = 20 V dc , V GS = 0 V dc )
(V DS = 20 V dc , V GS = 0 V dc , T J = 150 ° C)
?
?
?
?
1.5
10
Gate?Body Leakage Current
(V GS = ± 20 V dc , V DS = 0 V dc )
I GSS
?
?
± 100
nA dc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(V DS = V GS , I D = 250 m A dc )
Threshold Temperature Coefficient (Negative)
V GS(th)
1.0
?
1.5
4.1
2.0
?
V dc
mV/ ° C
Static Drain?to?Source On?Resistance (Note 3)
R DS(on)
m W
(V GS = 4.5 V dc , I D = 15 A dc )
(V GS = 10 V dc , I D = 20 A dc )
(V GS = 10 V dc , I D = 30 A dc )
Forward Transconductance (Note 3)
(V DS = 10 V dc , I D = 15 A dc )
g FS
?
?
?
?
11.2
8.4
8.2
27
12.5
10.5
?
?
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
948
1330
pF
Output Capacitance
Transfer Capacitance
(V DS = 20 V dc , V GS = 0 V, f = 1 MHz)
C oss
C rss
?
?
456
160
640
225
SWITCHING CHARACTERISTICS (Note 4)
Turn?On Delay Time
t d(on)
?
7.0
?
ns
Rise Time
Turn?Off Delay Time
Fall Time
(V GS = 10 V dc , V DD = 10 V dc ,
I D = 30 A dc , R G = 3 W )
t r
t d(off)
tf
?
?
?
53
14
10
?
?
?
Gate Charge
(V GS = 4.5 V dc , I D = 30 A dc ,
V DS = 10 V dc ) (Note 3)
Q T
Q 1
Q 2
?
?
?
9.5
3.0
4.4
?
?
?
nC
SOURCE?DRAIN DIODE CHARACTERISTICS
Forward On?Voltage
(I S = 20 A dc , V GS = 0 V dc ) (Note 3)
V SD
?
0.88
1.2
V dc
(I S = 30 A dc , V GS = 0 V dc )
(I S = 15 A dc , V GS = 0 V dc , T J = 125 ° C)
?
?
1.10
0.80
?
?
Reverse Recovery Time
Reverse Recovery Stored
(I S = 30 A d dc , V GS = 0 V d dc ,
dI S /dt = 100 A/ m s) (Note 3)
t rr
t a
t b
Q RR
?
?
?
?
29.1
13.6
15.5
0.02
?
?
?
?
ns
m C
Charge
3. Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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